Properties of Semiconductors MCQ

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• For semiconductors, the resistivity is inversely proportional to the temperature for semiconducting materials.
  ক

  True

  খ

  False
• EF = (Ec+ Ev)/2, this represents the Fermi energy level of which of the following?
  ক

  Extrinsic semiconductor

  খ

  N-type semiconductor

  গ

  P-type semiconductor

  ঘ

  Intrinsic semiconductor
• What is the Fermi energy of a n-type semiconductor?
  ক

  E /2 View Answer]

  খ

  E(F) = (Ec + Ev)/2

  গ

  EF = (Ec + E

  ঘ

  /2 [ EF = (Ev + Ea)/2
• The conductivity of germanium at 20°C is 2/ohm m. What is its conductivity at 40°C? Eg=0.72eV
  ক

  1.38×10-23/Ohm m

  খ

  1.0002/Ohm m

  গ

  293/Ohm m

  ঘ

  313/Ohm m
• A silicon plate of thickness 1mm, breadth 10mm and length 100mm is placed in a magnetic field of 0.5 Wb/m2 acting perpendicular to its thickness. If 10-3 A current flows along its length, calculate the Hall voltage developed, if the Hall coefficient is 3.66×104 m3/Coulomb.
  ক

  1.83×10-3 Volts

  খ

  3.66×10-4 Volts

  গ

  0.5 Volts

  ঘ

  25.150 Volts
• The intrinsic carrier density at room temperature in Ge is 2.37×1019/m3. If the electron and hole mobilities are 0.38 and 0.18 m2/Vs respectively. Calculate its resistivity.
  ক

  0.18ohm m

  খ

  0.460ohm m

  গ

  0.4587ohm m

  ঘ

  0.709ohm m
• A semiconducting crystal 12mm long, 5mm wide and 1mm thick has a magnetic flux density of 0.5Wb/m2 applied from front to back perpendicular to largest faces. When a current of 20mA flows length wise through the specimen, the voltage measured across its width is found to be 37μV. What is the Hall coefficient of this semiconductor?
  ক

  37×10-6 m3/C

  খ

  3.7×10-6 m3/C

  গ

  3.7×106 m3/C

  ঘ

  0
• Find the resistance of an intrinsic Ge rod cm long, 1mm wide and 1mm thick at 300K.
  ক

  2.32 ohm

  খ

  5314 ohm

  গ

  4310 ohm

  ঘ

  431 ohm
• Which method can be used to distinguish between the two types of carriers?
  ক

  Hall effect

  খ

  Rayleigh method

  গ

  Doppler effect

  ঘ

  Fermi effect
• What type of material is obtained when an intrinsic semiconductor is doped with trivalent impurity?
  ক

  Extrinsic semiconductor

  খ

  Insulator

  গ

  N-type semiconductor

  ঘ

  P-type semiconductor
• What type of material is obtained when an intrinsic semiconductor is doped with pentavalent impurity?
  ক

  N-type semiconductor

  খ

  Extrinsic semiconductor

  গ

  P-type semiconductor

  ঘ

  Insulator
• How are charge carriers produced in intrinsic semiconductors?
  ক

  By pure atoms

  খ

  By electrons

  গ

  By impure atoms

  ঘ

  By holes
• Compound semiconductors are also known as direct band gap semiconductors.
  ক

  True

  খ

  False
• Which column elements are combined to make compound semiconductors?
  ক

  First and fourth

  খ

  Fifth and sixth

  গ

  Second and fourth

  ঘ

  Third and fifth
• Which of the following is known as indirect band gap semiconductors?
  ক

  Germanium

  খ

  Nickel

  গ

  Platinum

  ঘ

  Carbon
• What are the charge carriers in semiconductors?
  ক

  Electrons and holes

  খ

  Electrons

  গ

  Holes

  ঘ

  Charges
• How is the resistance of semiconductor classified?
  ক

  High resistance

  খ

  Positive temperature co-efficient

  গ

  Negative temperature co-efficient

  ঘ

  Low resistance
• Semiconductor acts as an insulator in the presence of impurities.
  ক

  True

  খ

  False
• How does a semiconductor behave at absolute zero?
  ক

  Conductor

  খ

  Insulator

  গ

  Semiconductor

  ঘ

  Protection device