Linear Distortion MCQ

Test your knowledge with important Linear Distortion MCQ and their applications. These MCQs are beneficial for competitive exams too. Explore 30 + more Linear Distortion MCQs at Bissoy

• If the third order intercept point of a receiver is 35 dBm and the total noise in the receiver is -47.4 dBm signals to noise ratio is 10, then the spurious free dynamic range is:
  ক

  50.9 dB

  খ

  44.9 dB

  গ

  34.9 dB

  ঘ

  67 dB
• For a receiver, 1 dB compression point is 25 dBm and the noise power at the receiver output is -47.4 dBm, the linear dynamic range is:
  ক

  70 dB

  খ

  72.4 dB

  গ

  68 dB

  ঘ

  85 dB
• A receiver has a noise figure of 7 dB, gain of 40 dB, noise temperature is 290 K. then the noise power at the receiver is:
  ক

  47. 4 dBm

  খ

  -47.4 dBm

  গ

  23 dBm

  ঘ

  -23 dBm
• Passive intermodulation is significant only when:
  ক

  The input signal levels are low

  খ

  Input signal levels are high

  গ

  Input signal is sinusoidal

  ঘ

  Input signal is exponential
• The expression for linear dynamic range is given by:
  ক

  OP1 dB- No

  খ

  OP1 dB/ No

  গ

  OP1 dB+No

  ঘ

  None of the mentioned
• ________ is defined as the operating range for which a component or system has desirable characteristics.
  ক

  Static range

  খ

  Dynamic range

  গ

  Characteristic gain

  ঘ

  None of the mentioned
• Inter modulation distortion occurs only in active non linear devices and they are the only source of inter modulation distortion.
  ক

  True

  খ

  False
• In a non coherent cascade network, if the third order intercept point of an amplifier is 158 mW and the third order intercept point of a mixer is 5 mW, with an insertion loss of 6 dB, then the third order intercept point of the coherent cascade is:
  ক

  3 mW

  খ

  4.9 mW

  গ

  5.2 mW

  ঘ

  2 mW
• In a coherent cascade network, if the third order intercept point of an amplifier is 158 mW and the third order intercept point of a mixer is 5 mW, with an insertion loss of 6 dB, then the third order intercept point of the coherent cascade is:
  ক

  2 mW

  খ

  4 mW

  গ

  4.4 mW

  ঘ

  5 mW
• If the third order input intercept point of a mixer is 13 dBm and if the mixer has a conversion loss of 6 dBm, then the third order intercept point at the output is:
  ক

  3 dBm

  খ

  7 dBm

  গ

  4 dBm

  ঘ

  2 dBm
• The relation between an intercept points referenced at the input versus the output is given by the relation:
  ক

  OIP3=G (IIP3)

  খ

  (IIP3) = G (OIP3)

  গ

  OIP3=G (IIP3)2

  ঘ

  None of the mentioned
• Third-order intercept point is defined as the point at which the gain of a non linear device is 3 dB less than the maximum gain.
  ক

  True

  খ

  False
• When the input frequency consists of more than one closely spaced frequency, it results in:
  ক

  Intermodal distortion

  খ

  Gain compression

  গ

  Signal fading

  ঘ

  Signal attenuation
• In a non-linear device, for a single input frequency the output will consist of:
  ক

  Single frequency component

  খ

  Harmonics of the input frequency

  গ

  Constant gain

  ঘ

  None of the mentioned
• 1 dB compression point is defined as the power level for which the output power of the non-linear device is 1 dB
  ক

  True

  খ

  False
• The fall in gain of a device due to non-linearities is called:
  ক

  Gain compression

  খ

  Gain saturation

  গ

  Impedance mismatch

  ঘ

  None of the mentioned
• As the degree of non-linearity of a transistor or a diode increases, the power gain of the device:
  ক

  Increases

  খ

  Decreases

  গ

  Remains a constant

  ঘ

  None of the mentioned
• The output response of a non-linear circuit is given by the expression:
  ক

  V0=a0+a1Vi1+a2Vi2+a3Vi3…

  খ

  0=a0+a1Vi1

  গ

  V0=a2Vi2+a3Vi3

  ঘ

  V0=a0
• The ________property of devices like diodes and transistors is responsible for their usage in amplifiers and frequency convertors.
  ক

  Symmetry

  খ

  Non linearity

  গ

  Linearity

  ঘ

  None of the mentioned
• Active devices like diodes and transistors become non-linear at high power levels due to:
  ক

  Instability of transistor

  খ

  Thermal noise

  গ

  Gain compression

  ঘ

  None of the mentioned