GTOs MCQ

Test your knowledge with important GTOs MCQ and their applications. These MCQs are beneficial for competitive exams too. Explore 30 + more GTOs MCQs at Bissoy

• Choose the correct statement: GTOs have _________ as compared to the CTs.
  ক

  less on-state voltage drop

  খ

  less gate drive losses

  গ

  higher reverse blocking capabilities

  ঘ

  faster switching speed
• In case of the two-transistor model (T1 & T2) of GTO with anode-short, the anode-short is placed between the
  ক

  emitter of T1 & T2

  খ

  emitter of T1 & base of T2

  গ

  emitter of T1 & base of T1

  ঘ

  emitter of T1 & collector of T2
• Latching current for the GTOs is ________ as compared to CTs (Conventional thyristors).
  ক

  more

  খ

  less

  গ

  constant

  ঘ

  cannot be said
• Gold doped GTOs have _____________ as compared to the conventional GTOs
  ক

  high turn-off time

  খ

  low negative gate current requirement

  গ

  low reverse voltage blocking capabilities

  ঘ

  lower positive gate current requirement
• A GTO can be represented by two transistors T1 & T2. The current gain of both transistors are α1 and α2 respectively. A low value of gate current requires
  ক

  low value of α1 and α2

  খ

  low value of α1 and high value of α2

  গ

  high value of α1 and low value of α2

  ঘ

  high values of α1 and α2
• The turn-off gain βoff of the GTO is given by
  ক

  Ig/Ia

  খ

  Ia/Ig

  গ

  Vg/Va

  ঘ

  Vg/Va
• In a GTO the n+ layer forms the
  ক

  anode & gate

  খ

  cathode & gate

  গ

  cathode

  ঘ

  gate
• The anode current is ideally limited by the
  ক

  gate pulse amplitude

  খ

  internal impedance of the device

  গ

  load Impedance

  ঘ

  gate circuit impedance
• The GTO can be turned off
  ক

  by a positive gate pulse

  খ

  by a negative gate pulse

  গ

  by a negative anode-cathode voltage

  ঘ

  by removing the gate pulse
• The GTO (gate turn-off thyristor) is a
  ক

  p-n-p-n device

  খ

  p-n-p device

  গ

  p-metal-n device

  ঘ

  p-n single junction device