Characteristics and Requirements of Power Electronic Devices MCQ

Test your knowledge with important Characteristics and Requirements of Power Electronic Devices MCQ and their applications. These MCQs are beneficial for competitive exams too. Explore 30 + more Characteristics and Requirements of Power Electronic Devices MCQs at Bissoy

• CMOS stands for ________
  ক

  Complementary Metal Oxide Semiconductor

  খ

  Common Metal Oxide Semiconductor

  গ

  Conjugated Metal Oxide Semiconductor

  ঘ

  Convoluted Metal Oxide Semiconductor
• CMOS devices have high noise problems.
  ক

  True

  খ

  False
• A BJT exhibits a relatively low gain–bandwidth product compared to that of an FET.
  ক

  True

  খ

  False
• MESFET is the abbreviation of ________
  ক

  Metal Semiconductor Field Effect Transistor

  খ

  Metal Semiconductor Field Effect Thyristor

  গ

  Metal Semi-active Field Effect Transistor

  ঘ

  Metal Semi-passive Field Effect Transistor
• TFET stands for ________
  ক

  Tunnel Forward Effect Transistor

  খ

  Tunnel Field Effect Transistor

  গ

  Tunnel Field Effect Transistor

  ঘ

  Tunnel Field Effect Transducer
• JFET stands for ________
  ক

  Junction Forward Effect Transistor

  খ

  Jute Field Effect Transistor

  গ

  Junction Field Effect Transistor

  ঘ

  Junction Field Effect Transducer
• MNOS stands for ________
  ক

  Metal Neon Oxide Semiconductor

  খ

  Metal Nitrous Oxide Semiconductor

  গ

  Metal Negative Oxide Semiconductor

  ঘ

  Metal Nitride Oxide Semiconductor
• The input resistance is highest in ________ of the transistor amplifier.
  ক

  common emitter configuration

  খ

  common collector configuration

  গ

  any configuration

  ঘ

  common base configuration
• For a BJT in active region, the collector current depends on emitter voltage.
  ক

  True

  খ

  False
• In BJT the active operating region is ________
  ক

  linear

  খ

  non – linear

  গ

  sinusoidal

  ঘ

  non – sinusoidal
• A transistor with both emitter junction and collector junction forward biased is in its ________ mode.
  ক

  saturation

  খ

  inverted

  গ

  cut-off

  ঘ

  active
• A transistor with both emitter junction and collector junction reverse biased, is in its ________ mode.
  ক

  saturation

  খ

  inverted

  গ

  cut-off

  ঘ

  active
• A transistor with emitter junction reverse biased and collector junction forward biased is in its ________ mode.
  ক

  saturation

  খ

  inverted

  গ

  cut-off

  ঘ

  active
• A transistor with emitter junction forward biased and collector junction reverse biased, is in its ________ mode.
  ক

  saturation

  খ

  inverted

  গ

  cut-off

  ঘ

  active
• The commutation techniques employed in turning-off thyristors are based on the assumptions ________
  ক

  holding current is zero and load draws a constant current

  খ

  holding current is zero and load draws a variable current

  গ

  holding current is non-zero and load draws a constant current

  ঘ

  holding current is non-zero and load draws a variable current