Basic Planar Process MCQ

Test your knowledge with important Basic Planar Process MCQ and their applications. These MCQs are beneficial for competitive exams too. Explore 30 + more Basic Planar Process MCQs at Bissoy

• Which method is most suitable for silicon crystal growth in silicon wafer preparation?
  ক

  Float zone process

  খ

  Bridgeman-Stockbarger method

  গ

  Czochralski crystal growth process

  ঘ

  Laser heated pedestal growth
• In which method shallow penetration of dopants is possible?
  ক

  Ion implantation

  খ

  Vertical diffusion

  গ

  Horizontal diffusion

  ঘ

  Dopants diffusion
• During ion implantation process (before the ion strike the wafer) the accelerated ions are passed through
  ক

  Strong Electric field

  খ

  Strong Magnetic field

  গ

  Strong Electric and Magnetic Field

  ঘ

  None of the mentioned
• What will be the next step after slicing (process) silicon wafers?
  ক

  All of the mentioned

  খ

  Lapping

  গ

  Polishing

  ঘ

  Chemical
• Which semiconductor is most widely used for fabrication of Integrated Circuit?
  ক

  Germanium, Ge

  খ

  Gallium Arsenide, GaAs

  গ

  Silicon, Si

  ঘ

  All of the mentioned
• What process is used in semiconductor industry to fabricate Integrated Circuits?
  ক

  Silicon wafer preparation

  খ

  Silicon planar process

  গ

  Epitaxial growth of silicon

  ঘ

  Photolithography process
• Metal can IC packages are available in
  ক

  42 leads

  খ

  16 leads

  গ

  12 leads

  ঘ

  24 leads
• What type of packing is suitable for Integrated Circuits?
  ক

  Metal can package

  খ

  Dual-in-line package

  গ

  Ceramic flat package

  ঘ

  All of the mentioned
• How the aluminium film coating is carried out in metallization process?
  ক

  Heating and pouring aluminium in required place.

  খ

  Aluminium is vacuum evaporated and then condensed

  গ

  Placing the aluminium in required place and then heating it using tungsten

  ঘ

  None of the mentioned
• Pick out the incorrect statement Aluminium is usually used for metallization of most IC as it offers
  ক

  Relatively a good conductor

  খ

  High resistance

  গ

  Good mechanical bond with silicon

  ঘ

  Deposition of aluminium film using vacuum deposition
• Which isolation technique is used in applications like military and aeroscope?
  ক

  Thin film isolation

  খ

  PN-junction isolation

  গ

  Barrier isolation

  ঘ

  Dielectric isolation
• The major disadvantage of PN-junction isolation technique is:
  ক

  Formation of Parasitic Resistance

  খ

  Formation of Parasitic Capacitance

  গ

  Formation of Isolation island

  ঘ

  None of the mentioned
• What is the advantage of using Ion implantation process?
  ক

  Lateral spreading is more

  খ

  Performed at high temperature

  গ

  Beam current controlled from outside

  ঘ

  Performed at low temperature
• In ion implantation method, penetrating the ions into the silicon wafer depends upon
  ক

  Accelerating voltage

  খ

  Accelerating speed

  গ

  Accelerating current

  ঘ

  All of the mentioned
• Which component is not used as an impurity in diffusion process?
  ক

  Phosphorous

  খ

  Boron chloride

  গ

  Phosphorous pentaoxide

  ঘ

  Boron oxide
• In the fabrication of monolithic ICs, Boron chloride is added as an impurity in the diffusion process. Find the diffusion time, if the furnace is heated up to 1200oc.
  ক

  1 hour

  খ

  2 hours

  গ

  45 minutes

  ঘ

  30 minutes
• Which of the following is added as an impurity to p-type material in diffusion process?
  ক

  Phosphorous pentaoxide (P2O5)

  খ

  Phosphorous oxychloride (POcl3)

  গ

  Boron oxide (B2O3)

  ঘ

  None of the mentioned
• For photographic purpose usually coordinatograph is preferred for artwork because,
  ক

  It is a precision drafting machine

  খ

  Cutting head can be positioned accurately

  গ

  It can be moved along two perpendicular axes

  ঘ

  All of the mentioned
• Which type of etching process is preferred to make the photoresist immune to etchants?
  ক

  None of the mentioned

  খ

  Wet etching

  গ

  Plasma etching

  ঘ

  Chemical etching
• Find the coating material used for photo etching process along with its thickness range.
  ক

  Kodak photoresist (5000-10000Å)

  খ

  Kodak photoresist (1000-5000Å)

  গ

  Kodak photo etchant (1000-5000 Å)

  ঘ

  Kodak photo etchant (500-1000 Å)
• Mylar coated with a sheet of red photographic Mylar is used for artwork (layout) because,
  ক

  It is used to get a colourful layout

  খ

  It can be easily peeled off from layout

  গ

  It is recommended colour for layouts

  ঘ

  It is used for highlighting layout
• Find the area of artwork done for a monolithic chip of area 30mil × 30mil.
  ক

  16 cm × 16 cm

  খ

  60 cm × 60 cm

  গ

  12 cm × 12 cm

  ঘ

  36 cm × 36 cm
• How will be the initial artwork done for a normal IC?
  ক

  Smaller than the final dimension of chip

  খ

  Same as that of final dimension of chip

  গ

  Larger than the final dimension of chip

  ঘ

  None of the mentioned
• The process involved in photolithography is
  ক

  Making of a photographic mask only

  খ

  Photo etching

  গ

  Both photo etching and making of photographic mask

  ঘ

  None of the mentioned
• If the thickness of wafer after all polishing steps in silicon wafer preparation is 23-40 mils. Find its raw cut slice thickness?
  ক

  16-32 mils

  খ

  23-40 mils

  গ

  8-12 mils

  ঘ

  None of the mentioned
• How to obtain silicon ingots of 10-15cm diameter?
  ক

  By crystal pulling process

  খ

  By crystal melting process

  গ

  By crystal growing process

  ঘ

  All of the mentioned
• In Crzochralski crystal growth process, the materials are heated up to
  ক

  950oc

  খ

  1000 oc

  গ

  1420oc

  ঘ

  1200oc
• Oxidation process in silicon planar technology is also called as
  ক

  Photo oxidation

  খ

  Silicon oxidation

  গ

  Vapour oxidation

  ঘ

  Thermal oxidation
• At what temperature should the oxidation process be carried out to get an oxide film of thickness 0.02 to 2µm?
  ক

  0-105oc

  খ

  950-1115oc

  গ

  200-850oc

  ঘ

  350-900oc
• Mention the chemical reaction for oxidation process
  ক

  Si + 2H2O –> SiO2 + 2H2

  খ

  Si + O2 –> SiO2

  গ

  2Si + 2H2O –> 2SiO2 + 2H2

  ঘ

  2Si + 2H2O + 2O2 –> 2SiO2 + 2H2 + O2