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Higher Study | Power Electronics and Drives | Power Semiconductor Diodes and Transistors

As compared to power MOSFET, a BJT has
Identify the device whose symbol is given below
When emitter terminal of a UJT is open then the resistance of the base terminal is:
Consider the following statements. 1. BJT is a current controlled device whereas IGBT is a voltage-controlled device. 2. BJT and IGBT have low input impedance whereas PMOSFET has higher input impedance. 3. IGBTs are available at higher voltage ratings than PMOSFETs because of increment in ON state voltage drop is less in IGBT. 4. IGBT and PMOSFETs have different substrate structures. The correct statements are
Identify the device shown in the given figure.
A charger supplies 100 W at 20 V for charging the battery of a laptop. The power devices, used in the converter inside the charger, operate at a switching frequency of 200 kHz. Which power device is best suited for this purpose?
Consider the following statements with regards to IGBTs : 1. At the highest temperature, maximum current rating goes down to 2/3 value. 2. IGBT is the preferred device for applications that require high blocking voltages and lower operating frequencies. 3. Turn-on transients are identical to MOSFETs. Which of the above statements are correct? 
Which of the following is not a voltage controlled device?
Which of the following statements about an Insulated Gate Bipolar Transistor (IGBT) is NOT true?
Consider the following devices: 1. SCR 2. GTO 3. BJT 4. MOSFET 5. IGBT Which of these devices belong to the family of thyristors?
Which of the following statements is TRUE in the case of an IGBT?
Consider the following statements about IGBT 1. It has high input impedance 2. It has low ON state voltage drop 3. Its switching speed is higher than that of the MOSFET 4. It is a voltage controlled device Which of the above statements are correct?
Which power semiconductor device having highest switching speed?
Which of the following devices does NOT require a continuous base drive?
The double base diode which is operated with the emitter forward biased and a smaller emitter junction is called.
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