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Higher Study | Electronic Devices | PN Junction

The Schottky-barrier diode has:
An ideal diode can be considered as an:
Junction breakdown occurs:
For a silicon diode, the value of the forward bias voltage typically:
In mercury arc rectifier, mercury is used as
The diode that can be used for harmonic generation is
The Schottky-barrier diode has
Ionization within a P-N junction causes a layer on each side of the barrier called the
The number of doped regions in P-N diode is
The PN junction diode is a
PIN diode in reverse bias condition offers
Avalanche breakdown is primarily dependent on the phenomenon of
Depletion layer is found in
A device whose characteristics are very close to that of an ideal voltage source is a
When a p-n junction is reverse biased,
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