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Higher Study | Electronic Devices | Junction Field Effect Transistor

What is the behaviour of a FET, for large value of |VDS|?
Consider the following statements regarding JFET: 1. The relationship between the drain current and gate-to-source voltage of a JFET is a nonlinear. 2. The minimum current for JFET occurs at pinch-off voltage defined by VGS = VP. 3. A current controlled device is one in which a current defines the operating conditions of the device. Which of the above statements are correct?
Which of the following for the JFETs is NOT applicable?
Thermal runaway in a transistor biased in the active region is due to 1. heating of the transistor. 2. change in β due to an increase in temperature. 3. change in reverse collector saturation current due to a rise in temperature. 4. base-emitter voltage VBE which decreases with rise in temperature. Which of the above statements is/are correct?
Which of the following are the characteristics of a Junction Field Effect Transistor? 1. High input resistance 2. Good thermal stability 3. High current gain 4. Noisier than bipolar junction transistor
Which of the following is common feature of FET?
Which of the following option is true for FET?
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